View EIA1616-8P-2_4641037.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

EIA1616-8P-2
UPDATED 11/09/06
16.2-16.4GHz 8-Watt Internally Matched Power FET
FEATURES
* * * * * * * 16.2- 16.4GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +39.0 dBm Output Power at 1dB Compression 6.0 dB Min. Power Gain at 1dB Compression 30% Power Added Efficiency Non-Hermetic Metal Flange Package 100% Tested for DC, RF, and RTH
EIA1616-8P-2
ELECTRICAL CHARACTERISTICS (Ta = 25C)
SYMBOL P1dB G1dB G PAE Id1dB IDSS VP RTH PARAMETERS/TEST CONDITIONS1
Output Power at 1dB Compression f = 16.2-16.4GHz VDS = 8 V, IDSQ 2200mA Gain at 1dB Compression f = 16.2-16.4GHz VDS = 8 V, IDSQ 2200mA Gain Flatness f = 16.2-16.4GHz VDS = 8 V, IDSQ 2200mA Power Added Efficiency at 1dB Compression VDS = 8 V, IDSQ 2200mA f = 16.2-16.4GHz Drain Current at 1dB Compression Saturated Drain Current Pinch-off Voltage Thermal Resistance
2
Caution! ESD sensitive device.
MIN
38.0 6.0
TYP
39.0 7.0
MAX
UNITS
dBm dB
0.6 30 2600 4000 -1.0 3.5 3200 6000 -2.5 4.0
o
dB % mA mA V C/W
f = 16.2-16.4GHz
VDS = 3 V, VGS = 0 V VDS = 3 V, IDS = 40 mA
Note: 1. Tested with 100 Ohm gate resistor. 2. Overall Rth depends on case mounting.
ABSOLUTE MAXIMUM RATING1,2
SYMBOLS PARAMETERS Drain-Source Voltage Gate-Source Voltage Forward Gate Current Reverse Gate Current Input Power Channel Temperature Storage Temperature Total Power Dissipation ABSOLUTE1 10V -5V 86.4mA -14.4mA 38 dBm 175 C -65 to +175 C 38W
o o
CONTINUOUS2 8V -3V 28.8mA -4.8mA @ 3dB Compression 175 oC -65 to +175 oC 38W
Vds Vgs Igf Igr Pin Tch Tstg Pt
Notes: 1. Operating the device beyond any of the above ratings may result in permanent damage or reduction of MTTF. 2. Bias conditions must also satisfy the following equation PT < (TCH -TPKG)/RTH; where TPKG = temperature of package, and PT = (VDS * IDS) - (POUT - PIN). Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 page 1 of 2 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com Revised November 2006
EIA1616-8P-2
UPDATED 11/09/06
16.2-16.4GHz 8-Watt Internally Matched Power FET
DISCLAIMER EXCELICS SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. EXCELICS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN.
LIFE SUPPORT POLICY EXCELICS SEMICONDUCTOR PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF EXCELICS SEMICONDUCTOR, INC. AS HERE IN:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness
Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 page 2 of 2 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com Revised November 2006

▲Up To Search▲

Price & Availability of EIA1616-8P-2

	To Download EIA1616-8P-2 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .